Partner Search

Summary

A Swedish university spin-off SME has developed a process and know-how in manufacturing graphene on silicon carbide (SiC). Graphene on SiC is suitable for electronic devices which require higher performance material, like high frequency applications or sensors. The company offers mono- or multilayer graphene, or thin graphitic layers on SiC substrates. They are looking for technical cooperations and commercial agreements with academia, RTD organisations as well as Industry.

Full description

Graphene is one monolayer of carbon atoms in a two-dimensional network. The combination creates a range of versatile properties.

The silicon carbide wafers consist of silicon and carbon atoms. When the wafer surface is heated, silicon atoms leave the surface and the remaining carbon atoms form a graphene layer. The graphene properties may vary depending on the substrate features but the major merits related to electronics applications, e.g. high carrier mobility, high electrical and thermal conductivity are preserved due to the two dimensional nature and the unique electronic band structure.

The company offers monolayer graphene on the Si-face of silicon carbide, graphene on off axis substrates, graphene on cubic silicon carbide, graphene on C-face, or thin graphitic layers of crystalline quality on silicon carbide. The silicon carbide substrate may be conductive or semi-insulating depending on the application and commercial substrates are available in large size. Both silicon carbide and graphene are biocompatible.

The company has many years of experience in silicon carbide growth and provide their expertise in the development work.

They are looking for technical cooperation and commercial agreements with Academia, RTD organisations as well as Industry.

Innovative Aspects

The company process applies a higher temperature than other methods of graphene on silicon carbide. The benefit is that a higher quality is obtained. In addition, the company develops processes for silicon carbide, including cubic silicon carbide, and may adapt the surfaces to the needs of each application.

Partner expertise sought:

- Type of partner sought: Academia, Research organisations and Industry.

- Specific area of activity of the partner: Semiconductor or electronics component RTD.

- Task to be performed by the partner sought: Technology Implementation.